- 您现在的位置：买卖IC网 > Sheet目录407 > DMP2012SN-7 (Diodes Inc)MOSFET P-CH 20V 700MA SC59-3
DMP2012SN
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5) Steady State
Pulsed Drain Current (Note 6)
Symbol
V DSS
V GSS
I D
I DM
Value
-20
? 12
-0.7
-2.8
Unit
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R ? JA
T J , T STG
Value
500
250
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV DSS
I DSS
I GSS
-20
?
?
?
?
?
?
-10
? 10
V
μA
μA
V GS = 0V, I D = -250μA
V DS = -20V, V GS = 0V
V GS = ? 12V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
V GS(th)
R DS (ON)
|Y fs |
V SD
-0.5
?
?
?
?
0.23
0.37
1.5
-0.8
-1.2
0.30
0.50
?
-1.1
V
?
S
V
V DS = V GS , I D = -250μA
V GS = -4.5V, I D = -0.4A
V GS = -2.5V, I D = -0.4A
V DS = -10V, I D = -0.4A
V GS = 0V, I S = -0.7A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
178.5
26.3
18.8
??
??
??
pF
pF
pF
V DS = -10V, V GS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t D(ON)
?
10.4
?
ns
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
t D(OFF)
t r
t f
?
?
?
175
22.3
64
?
?
?
ns
ns
ns
V DD = -10V, I D = -0.4A,
V GS = -5.0V, R GEN = 50 ?
Notes:
5. Device mounted on FR-4 PCB.
6. Pulse width ? 10μS, Duty Cycle ? 1%.
7. Short duration pulse test used to minimize self-heating effect.
DMP2012SN
Document number: DS30790 Rev. 7 - 2
2 of 5
www.diodes.com
September 2013
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
DMP2018LFK-7
MOSFET P-CH 20V 9.2A 6-DFN
DMP2022LSS-13
MOSFET P-CH 20V 10A 8SOIC
DMP2035U-7
MOSFET P-CH SOT-23
DMP2035UTS-13
MOSFET 2P-CH 20V 6.04A 8TSSOP
DMP2035UVT-7
MOSFET P CH 20V 6A TSOT26
DMP2039UFDE-7
MOSF P CH 25V 6.7A U-DFN2020-6E
DMP2039UFDE4-7
MOSF P CH 25V 7.3A X2-DFN2020-6
DMP2066LDM-7
MOSFET P-CH 20V 4.6A SOT-26
相关代理商/技术参数
DMP2018LFK
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2018LFK-13
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2018LFK-7
功能描述:MOSFET MOSFET BVDSS: 8V-24V U-DFN2523-6 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP2022LSS
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2022LSS-13
功能描述:MOSFET PMOS SINGLE P-CHANNL 20V 10A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP2022LSS-7
制造商:DIODES 功能描述:SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2033UCB9-7
功能描述:MOSFET P-Ch Enh Mode FET 33mOhm -20V -5.8A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP2035U
制造商:Diodes Incorporated 功能描述:MOSFET P CH ESD 20V 3.6A SOT23 制造商:Diodes Incorporated 功能描述:MOSFET, P CH, ESD, 20V, 3.6A, SOT23 制造商:Diodes Incorporated 功能描述:MOSFET, P CH, ESD, 20V, 3.6A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV ;RoHS Compliant: Yes